AO4900 symbol unit s v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol unit s r jl r jl pulsed drain current b junction and storage temperature range 2 w schottky reverse voltage 30 1.44 1.44 power dissipation max c/w c/w mosfet 30 12 6.9 5.8 40 2 i f 40 thermal characteristics schottky 62.5 40 48 74 continuous drain current a gate-source voltage schottky drain-source voltage parameter -55 to 150 a absolute maximum ratings t a =25c unless otherwise noted p d i d 3 a 2 40 continuous forward current a parameter: thermal characteristics mosfet maximum junction-to-ambient a t 10s -55 to 150 typ maximum junction-to-ambient a steady-state 110 maximum junction-to-lead c steady-state 35 62.5 maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state 110 maximum junction-to-lead c steady-state pulsed forward current b 71 32 47.5 r ja features v ds (v) = 30v i d = 6.9a (v gs = 10v) r ds(on) < 27m ? (v gs = 10v) r ds(on) < 32m ? (v gs = 4.5v) r ds(on) < 50m ? (v gs = 2.5v) schottky v ds (v) = 30v, i f = 3a, v f =0.5v@1a the AO4900 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc- dc converters. a schottky diode is co-packaged in parallel with the synchronous mosfet to boost efficiency further. standard product AO4900 is pb- free (meets rohs & sony 259 specifications). AO4900l is a green product ordering option. AO4900 and AO4900l are electrically identical. soic-8 g1 s1 g2 s2/a d1 d1 d2/k d2/k 1 2 3 4 8 7 6 5 g2 d2 s2 k a g1 d1 s1 effect transistor with schottky diode dual n-channel enhancement mode field general description www.freescale.net.cn 1 / 5
AO4900 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.7 1 1.4 v i d(on) 25 a 22.6 27 t j =125c 33 40 27 32 m ? 42 50 m ? g fs 12 16 s v sd 0.71 1 v i s 3a c iss 846 1050 pf c oss 96 pf c rss 67 pf r g 1.24 3.6 ? q g 9.6 12 nc q gs 1.65 nc q gd 3nc t d(on) 3.2 4.8 ns t r 4.1 6.2 ns t d(off) 26.3 40 ns t f 3.7 5.5 ns t rr body diode reverse recovery time i f =5a, di/dt=100a/ s 15.5 20 ns q rr body diode reverse recovery charge i f =5a, di/dt=100a/ s 7.9 nc schottky parameters v f 0.45 0.5 v 0.007 0.05 3.2 10 12 20 c t 37 pf this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v a gate-body leakage current v ds =0v, v gs = 12v gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v r ds(on) static drain-source on-resistance v gs =10v, i d =6.9a m ? v gs =4.5v, i d =6.0a v gs =2.5v, i d =5a gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =5a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance ma switching parameters total gate charge v gs =4.5v, v ds =15v, i d =6.9a gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =2.2 ? , r gen =3 ? i rm maximum reverse leakage current v r =30v v r =30v, t j =125c v r =30v, t j =150c junction capacitance v r =15v turn-on rise time turn-off delaytime turn-off fall time forward voltage drop i f =1.0a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : aug 2005 www.freescale.net.cn 2 / 5
AO4900 typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 50 100 150 200 temperature (c) figure 4: on resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 10 20 30 40 50 60 70 0246810 v gs (volts) figure 5: on resistance vs. gate-source voltage r ds(on) (m ? ) v ds =5v v gs =2.5v v gs =4.5 v v gs =10v i d =5a 25c i d =5a 125c 25c 25c 125c www.freescale.net.cn 3 / 5
AO4900 typical electrical and thermal characteristics 0 1 2 3 4 5 024681012 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (a) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1m s 0.1s 1 s 10s dc r ds(on) limited v ds =15v i d =6.9a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v t j(max) =150c t a =25c www.freescale.net.cn 4 / 5
AO4900 typical electrical and thermal characteristics: schottky 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 50 100 150 200 250 0 5 10 15 20 25 30 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 175 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (ma) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: schottky normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =1a 25c i f =3a v r =30v 125c t on t p d www.freescale.net.cn 5 / 5
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